Article citationsMore>>

S. M. Malik and K. O’Leary, “Deviations from Square- Root Distributions of Electronic States in Hydrogenated Amorphous Silicon and Their Impact upon the Resultant Optical Properties,” Journal of Non-Crystalline Solids, Vol. 336, No. 1, 2004, pp. 64-70. doi:10.1016/j.jnoncrysol.2003.12.042

has been cited by the following article:

• TITLE: The High Energy Region of the Absorption Edge of a-Si:H, a Theoretical Study—III

  AUTHORS: Salwan Kamal Jamil Al-Ani, Abdullah Ibrahim, Subhi Saeed Al-Rawi

  KEYWORDS: High Energy; Absorption Edge

  JOURNAL NAME: Materials Sciences and Applications, Vol.3 No.8, August 22, 2012

  ABSTRACT: In this paper we try to give a reasonable account for the origin of the experimental optical energy gap Eo of a-Si:H deduced from the plot due to Cody ( vs. E). Using a realistic model density of states diagram for a-Si:H and the constant dipole matrix element assumption, and a reasonable definition of the real optical energy gap EG, a new theoretical equation for ε2(E) was derived. The plot of the square root of this function as a function of the photon energy E for appropriate fitting parameters gives a straight line fit in the energy region of significance extrapolating to the energy axis at a value similar to the experimental optical gap but about 0.1 eV lower than the theoretical optical gap EG proposed in our paper. We conclude that the experimental optical gap Eo does not necessarily coincide with any optical transition threshold in the density of states diagram of a-Si:H.