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M. M. Al-Jassim, R. G. Dhere, K. M. Jons, F. S. Hasoon and Sheldon, “The Morphology, Microstructure, and Luminescent Properties of CdS/CdTe Films,” 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion, Vienna, 6-10 July 1998.

has been cited by the following article:

• TITLE: Power Conversion Enhancement of CdS/CdTe Solar Cell Interconnected with Tunnel Diode

  AUTHORS: Wagah F. Mohammed, Omar Daoud, Munther Al-Tikriti

  KEYWORDS: CdS/CdTe; Solar Cells; Energy Conversion; Efficiency

  JOURNAL NAME: Circuits and Systems, Vol.3 No.3, June 25, 2012

  ABSTRACT: One of the most promising solar cell devices is cadmium telluride (CdTe) based. These cells however, have their own problems of stability and degradation in efficiency. Measurements show that CdS/CdTe solar cell has high series resistance which degrades the performance of solar cell energy conversion. Both active layers (CdS and CdTe) had been fabricated by thermal evaporation and tested individually. It was found that CdS window layer of 300 nm have the lowest series resistance with maximum light absorption. While 5 - 7 μm CdTe absorber layer absorbed more than 90% of the incident light with minimum series resistance. A complete CdS/CdTe solar cell was fabricated and tested. It was found that deposited cell without heat treatment shows that the short circuit current increment decreases as the light intensity increases. This type of deposited cell has low conversion efficiency. The energy conversion efficiency was improved by heat treatment, depositing heavily doped layer at the back of the cell and minimizing the contact resistivity by depositing material with resistivity less than 1 m??cm2. All these modifications were not enough because the back contact is non-ohmic. Tunnel diode of CdTe (p++)/CdS (n++) was deposited in the back of the cell. The energy conversion efficiency was improved by more than 7%.