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B. Mednikarov, G. Spasov, Tz. Babeva, Aluminum nitride layer prepared by Dc/RF magnetron sputtering, Journal of Optoelectronics and Advanced Materials, Vol. 7, No. 3, June 2005, p.1421-1427

has been cited by the following article:

• TITLE: Influence of Sputter Deposition Time on the Growth of c-Axis Oriented AlN/Si Thin Films for Microelectronic Application

  AUTHORS: V. VasanthiPillay, K. Vijayalakshmi

  KEYWORDS: Aluminum Nitride; Thin Films; Sputtering; Preferential Orientations

  JOURNAL NAME: Journal of Minerals and Materials Characterization and Engineering, Vol.11 No.7, July 25, 2012

  ABSTRACT: Aluminum Nitride films were grown on and Si (100) substrate by D.C. reactive magnetron sputtering at room temperature. Influence of sputter deposition time on properties of the AlN films was studied. Structural optical and electrical properties of the film were investigated. XRD measurements showed the presence of hexagonal wurtzite structure. The optical reflectance spectra of the film were taken and the band gap calculated varied from 4.35 to 5.3 eV. Finally MIS capacitors were fabricated on silicon substrates and variation of dielectric parameter with deposition time was reported.