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S. Ishida, S. Takaoka, K. Oto, K. Murase, S. Shirai and T. Serikawa, “Hopping Transport in Band-Tail of Grain Boundaries in Poly-Si TFTs,” Applied Surface Science, Vol. 113-114, 1997, pp. 685-688. doi:10.1016/S0169-4332(96)00957-9

has been cited by the following article:

• TITLE: Negative Magnetoresistance Behaviour and Variable Range Hopping Conduction in Insulating NbSi Amorphous Alloys at Very Low Temperature with aagnetic Field

  AUTHORS: Abdelghani Sybous, Abdelhamid El Kaaouachi, Jamal Hemine, Abdelfattah Narjis, Lhoussine Limouny, Said Dlimi, Rachid Abdia, Gerard Biskupski

  KEYWORDS: NbSi Amorphous Alloys; Negative Magnetoresistance; Magnetic Field; Localized Magnetic moments; Quantum Interference

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.7, July 17, 2012

  ABSTRACT: We present results of an experimental study of magnetoresistance (MR) in insulating NbSi amorphous alloys sample showing Variable Range Hopping (VRH) conductivity. The MR is found to be negative in a wide range of low temperature (4.2-20 K) and in the range of moderate magnetic fields (0-4 T). We made tentative analysis using three theoretical models which are the model of quantum interference, the model of Zeeman effect and the model of localized magnetic moments