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D. J. Bishop, E. G. Spencer and R. C. Dynes, “The Metal-Insulator Transition in Amorphous Nb:Si,” Solid- State Electronics, Vol. 28, No. 1-2, 1985, pp. 73-79. doi:10.1016/0038-1101(85)90212-6

has been cited by the following article:

• TITLE: Negative Magnetoresistance Behaviour and Variable Range Hopping Conduction in Insulating NbSi Amorphous Alloys at Very Low Temperature with aagnetic Field

  AUTHORS: Abdelghani Sybous, Abdelhamid El Kaaouachi, Jamal Hemine, Abdelfattah Narjis, Lhoussine Limouny, Said Dlimi, Rachid Abdia, Gerard Biskupski

  KEYWORDS: NbSi Amorphous Alloys; Negative Magnetoresistance; Magnetic Field; Localized Magnetic moments; Quantum Interference

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.7, July 17, 2012

  ABSTRACT: We present results of an experimental study of magnetoresistance (MR) in insulating NbSi amorphous alloys sample showing Variable Range Hopping (VRH) conductivity. The MR is found to be negative in a wide range of low temperature (4.2-20 K) and in the range of moderate magnetic fields (0-4 T). We made tentative analysis using three theoretical models which are the model of quantum interference, the model of Zeeman effect and the model of localized magnetic moments