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T. A. Dauzhenka, V. K. Ksenevich, I. A. Bashmakov and J. Galibert, “Origin of Negative Magnetoresistance in Polycrystalline SnO2 Films,” Physical Review B, Vol. 83, No. 16, 2011, Article ID: 165309. doi:10.1103/PhysRevB.83.165309

has been cited by the following article:

• TITLE: Negative Magnetoresistance Behaviour and Variable Range Hopping Conduction in Insulating NbSi Amorphous Alloys at Very Low Temperature with aagnetic Field

  AUTHORS: Abdelghani Sybous, Abdelhamid El Kaaouachi, Jamal Hemine, Abdelfattah Narjis, Lhoussine Limouny, Said Dlimi, Rachid Abdia, Gerard Biskupski

  KEYWORDS: NbSi Amorphous Alloys; Negative Magnetoresistance; Magnetic Field; Localized Magnetic moments; Quantum Interference

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.7, July 17, 2012

  ABSTRACT: We present results of an experimental study of magnetoresistance (MR) in insulating NbSi amorphous alloys sample showing Variable Range Hopping (VRH) conductivity. The MR is found to be negative in a wide range of low temperature (4.2-20 K) and in the range of moderate magnetic fields (0-4 T). We made tentative analysis using three theoretical models which are the model of quantum interference, the model of Zeeman effect and the model of localized magnetic moments