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R. Abdia, A. El kaaouachi, A. Nafidi, G. Biskupski and J. Hemine, “Variable range hopping conductivity and negative magnetoresistance in n-type InP semiconductor,” Journal of Solid State Electronics, vol. 53, 2009, pp. 469–472.

has been cited by the following article:

• TITLE: Variable Range Hopping in Hydrogenated Amorphous Silicon-Nickel Alloys

  AUTHORS: Abdelfattah Narjis, Abdelhamid El kaaouachi, Abdelghani Sybous, Lhoussine Limouny, Said Dlimi, Abdessadek Aboudihab, Jamal Hemine, Rachid Abdia, Gerard Biskupski

  KEYWORDS: Amorphous Silicon-Nickel Alloys a-Si1-yNiy:H; Variable Range Hopping Conductivity; Transport Phenomenon; Metal Insulator Transition

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.7, July 17, 2012

  ABSTRACT: On the insulating side of the metal-insulator transition (MIT), the study of the effect of low Temperatures T on the electrical transport in amorphous silicon-nickel alloys a-Si1-yNiy:H exhibits that the electrical conductivity follows, at the beginning, the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T-1/2. This behaviour showed that long range electron-electron interaction reduces the Density Of State of carriers (DOS) at the Fermi level and creates the Coulomb gap (CG). For T higher than a critical value of temperature TC, we obtained the Mott Variable Range Hopping regime with T-1/4, indicating that the DOS becomes almost constant in the vicinity of the Fermi level. The critical temperature TC decreases with nickel content in the alloys.