YASUTOSHI, N., SHIGERU, O., SHOISHI, S. & YOSHIHIKO, S., 1983, “Charge distribution and atomic thermal vibrations in lead chalcogenide crystals.” Acta Cryst., B39, pp. 312 – 317.
has been cited by the following article:
TITLE: Structural and microstructural characteristics of B-doped PbTe semiconductor
AUTHORS: Jovica N. Stojanovic
KEYWORDS: B-doped PbTe semiconductor, the Rietveld method, microstructural measurements.
JOURNAL NAME: Journal of Minerals and Materials Characterization and Engineering, Vol.5 No.2, October 20, 2006
ABSTRACT: The main task of this paper was accurate determination of structural and microstructural parameters of B-doped PbTe semiconductor (“p” type). Four samples (undoped PbTe, and three doped with initial B contents: 1 %, 3 % and 8 %) were synthesized using the Bridgman method and analysed using X-ray powder diffraction (XRD) technique. Structural features were obtained using the Rietveld method and microstructural by diffraction-line broadening methods. Microstructural measurements contain both crystallite domain sizes and microstrain calculations obtained by the Warren-Averbach and the simplified integral-breadth methods.