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R. Low, A. Gupta, N. Bateman, D. Ramappa, P. Sullivan, W. Skinner, J. Mullin, S. Peters, “High Efficiency Selective Emitter Enabled through Patterned Ion Implantation,” Proceedings of the 35th IEEE Photovoltaic Solar Energy Conference and Exhibition, Honolulu, 20-25 June 2010.

has been cited by the following article:

• TITLE: Status of Selective Emitters for p-Type c-Si Solar Cells

  AUTHORS: Mohammad Ziaur Rahman

  KEYWORDS: Solar Cell; Selective Emitter; Efficiency; c-Si

  JOURNAL NAME: Optics and Photonics Journal, Vol.2 No.2, June 28, 2012

  ABSTRACT: Crystalline silicon (c-Si) solar cells have the lion share in world PV market. Solar cells made from crystalline silicon have lower conversion efficiency, hence optimization of each process steps are very important. Achieving low-cost photovoltaic energy in the coming years will depend on the development of third-generation solar cells. Given the trend towards these Si materials, the most promising selective emitter methods are identified to date. Current industrial monocrystalline Cz Si solar cells based on screen-printing technology for contact formation and homogeneous emitter have an efficiency potential of around 18.4%. Limitations at the rear side by the fully covering Al-BSF can be changed by selective emitter designs allowing a decoupling and separate optimization of the metallised and non-metallised areas. Several selective emitter concepts that are already in industrial mass production or close to it are presented, and their specialties and status concerning cell performance are demonstrated. Key issues that are considered here are the cost-effectiveness, added complexity, additional benefits, reliability and efficiency potential of each selective emitter tech- niques.