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T. Matsushima and C. Adachi, “Extremely Low Voltage Organic Light-Emitting Diodes with P-Doped Alpha-Sexi- thiophene Hole Transport and N-Doped Phenyldipyrenyl- phosphine Oxide Electron Transport Layers,” Applied Physical Letters, Vol. 89, No. 25, 2006, Article ID 253506. doi:10.1063/1.2410236

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• TITLE: Electron Transport Materials: Synthesis, Properties and Device Performance

  AUTHORS: Lelia Cosimbescu, Liang Wang, Monte L. Helm, Evgueni Polikarpov, James S. Swensen, Asanga B. Padmaperuma

  KEYWORDS: Electron Transport; OLED; Triplet Energy

  JOURNAL NAME: International Journal of Organic Chemistry, Vol.2 No.2, June 27, 2012

  ABSTRACT: We report the design, synthesis and characterization, thermal and photophysical properties of two silane based electron transport materials, dibenzo[b,d]thiophen-2-yltriphenylsilane (Si?87) and (dibenzo[b,d]thiophen-2-yl)diphenylsilane (Siφ88) and their performance in blue organic light emitting devices (OLEDs). The utility of these materials in blue OLEDs with iridium (III) bis[(4,6-difluorophenyl)-pyridinato-N,C2’]picolinate (Firpic) as the phosphorescent emitter was demonstrated. Using the silane Siφ87 as the electron transport material (ETm), an EQE of 18.2% was obtained, with a power efficiency of 24.3 lm/W (5.8V at 1 mA/cm2), in a heterostructure. When Siφ88 is used, the EQE is 18.5% with a power efficiency of 26.0 lm/W (5.5V at 1 mA/cm2).