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S. Sanguinetti, M. Padovani, M. Guirioli, E. Grilli, M. Guzzi, A. Vinattieri, M. Collocci, P. Frigeri, S. Franchi, L. Lazzarini and G. Salviati, “Study of GaAs Spacer Layers in InAs/GaAs Vertically Aligned Quantum Dot Structures,” Thin Solid Films, Vol. 380, No. 1-2, 2000, pp. 224- 226. doi:10.1016/S0040-6090(00)01511-X

has been cited by the following article:

• TITLE: Excitation Transfer in Vertically Stacked in (Ga)As/GaAs Quantum Rings

  AUTHORS: R. Naouari, W. Ouerghui, J. Martinez-Pastor, J. Gomis, M. A. Maaref, D. Granados, J. M. Garcia

  KEYWORDS: Quantum Rings; Vertical Stack; Time Resolved Photoluminescence

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.6, June 21, 2012

  ABSTRACT: Carrier tunnelling through GaAs barriers of different thicknesses is investigated in vertically InGaAs/GaAs quantum rings (QR’s). Shorter PL decay time of the ground state emission of high-energy component in the sample with thicker spacer (1.5 nm) is ascribed to both tunnelling effect between the two QR families and vertical coupling between layers in the stacks. We found that tunnelling time between QR’s followed the Wentzel-Kramers-Brillouin (WKB) approximation. The non resonant tunnelling rate between QR’s is found to be different by one order of magnitude from the rate in quantum dots (QD’s).