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B. I. Shklovskii and A. L. Efros, “Electronic Properties of Doped Semiconductors,” Springer, Berlin, 1984.

has been cited by the following article:

• TITLE: Positive Magnetoresistance in Hydrogenated Amorphous Alloys Silicon Nickel a-Si1-yNiy:H at Very Low Temperature with Magnetic Field

  AUTHORS: Abdelfattah Narjis, Abdelhamid El kaaouachi, Jamal Hemine, Abdelghani Sybous, Lhoussine Limouny, Said Dlimi, Rachid Abdia, Gerard Buskipski

  KEYWORDS: Amorphous Silicon-Nickel Alloys a-Si1-yNiy:H; Variable Range Hopping Conductivity; Metal Insulator Transition; Positive Magnetoresistance

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.6, June 21, 2012

  ABSTRACT: We present results of an experimental study of magnetoresistance phenomenon in an amorphous silicon-nickel alloys a-Si1-yNiy:H:H (where y = 0.23) on the insulating side of the metal-insulator transition (MIT) in presence of magnetic field up to 4.5 T and at very low temperature. The electrical resistivity is found to follow the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T -1/2. This behaviour indicates the existence of the Coulomb gap (CG) near the Fermi level.