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B. P. Swain, “The Analysis of Carbon Bonding Environment in HWCVD Deposited a-SiC:H Films by XPS and Raman Spectroscopy,” Surface and Coatings Technology, Vol. 201, No. 3-4, 2006, pp. 1589-1593. doi:10.1016/j.surfcoat.2006.02.029

has been cited by the following article:

• TITLE: Current-Voltage Characteristics of ITO/p-Si and ITO/n-Si Contact Interfaces

  AUTHORS: Gopal G. Pethuraja, Roger E. Welser, Ashok K. Sood, Changwoo Lee, Nicholas J. Alexander, Harry Efstathiadis, Pradeep Haldar, Jennifer L. Harvey

  KEYWORDS: Sputtered Amorphous Silicon; Electrical Contact Characteristics; ITO/Si Contact

  JOURNAL NAME: Advances in Materials Physics and Chemistry, Vol.2 No.2, June 20, 2012

  ABSTRACT: We investigated the electrical contact characteristics of indium tin oxide (ITO)/doped hydrogenated amorphous silicon (a-Si:H) junctions. For efficient collection of photo-generated carriers, photovoltaic and photodetector devices require good ohmic contacts with transparent electrodes. The amorphous-Si thin films were sputter deposited on ITO coated glass substrates. As-deposited p-type a-Si:H on ITO formed nearly ohmic type contacts and further annealing did not improve the contact characteristics. On the other hand, as-deposited n-type a-Si:H on ITO formed an ohmic contact, while further annealing resulted in a Schottky type contact. The ITO contact with p-type silicon semiconductor is a ro-bust ohmic contact for Si based optoelectronic devices.