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D. W. Kim, Y. J. Sung, J. W. Park and G. Y. Yeom, “A Study of Transparent Indium Tin Oxide (ITO) Contact to p-GaN,” Thin Solid Films, Vol. 398-399, 2001, pp. 87-92.

has been cited by the following article:

• TITLE: Current-Voltage Characteristics of ITO/p-Si and ITO/n-Si Contact Interfaces

  AUTHORS: Gopal G. Pethuraja, Roger E. Welser, Ashok K. Sood, Changwoo Lee, Nicholas J. Alexander, Harry Efstathiadis, Pradeep Haldar, Jennifer L. Harvey

  KEYWORDS: Sputtered Amorphous Silicon; Electrical Contact Characteristics; ITO/Si Contact

  JOURNAL NAME: Advances in Materials Physics and Chemistry, Vol.2 No.2, June 20, 2012

  ABSTRACT: We investigated the electrical contact characteristics of indium tin oxide (ITO)/doped hydrogenated amorphous silicon (a-Si:H) junctions. For efficient collection of photo-generated carriers, photovoltaic and photodetector devices require good ohmic contacts with transparent electrodes. The amorphous-Si thin films were sputter deposited on ITO coated glass substrates. As-deposited p-type a-Si:H on ITO formed nearly ohmic type contacts and further annealing did not improve the contact characteristics. On the other hand, as-deposited n-type a-Si:H on ITO formed an ohmic contact, while further annealing resulted in a Schottky type contact. The ITO contact with p-type silicon semiconductor is a ro-bust ohmic contact for Si based optoelectronic devices.