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Y. C. Lin, S. J. Chang, Y. K. Su, T. Y. Tsai, C. S. Chang, S. C. Shei, S. J. Hsu, C. H. Liu, U. H. Liaw, S. C. Chen and B. R. Huang, “Nitride-Based Light-Emitting Diodes with Ni/ITO P-Type Ohmic Contacts,” IEEE Photonics Technology Letters, Vol. 14, No. 12, 2002, pp. 1668-1670. doi:10.1109/LPT.2002.804649

has been cited by the following article:

• TITLE: Current-Voltage Characteristics of ITO/p-Si and ITO/n-Si Contact Interfaces

  AUTHORS: Gopal G. Pethuraja, Roger E. Welser, Ashok K. Sood, Changwoo Lee, Nicholas J. Alexander, Harry Efstathiadis, Pradeep Haldar, Jennifer L. Harvey

  KEYWORDS: Sputtered Amorphous Silicon; Electrical Contact Characteristics; ITO/Si Contact

  JOURNAL NAME: Advances in Materials Physics and Chemistry, Vol.2 No.2, June 20, 2012

  ABSTRACT: We investigated the electrical contact characteristics of indium tin oxide (ITO)/doped hydrogenated amorphous silicon (a-Si:H) junctions. For efficient collection of photo-generated carriers, photovoltaic and photodetector devices require good ohmic contacts with transparent electrodes. The amorphous-Si thin films were sputter deposited on ITO coated glass substrates. As-deposited p-type a-Si:H on ITO formed nearly ohmic type contacts and further annealing did not improve the contact characteristics. On the other hand, as-deposited n-type a-Si:H on ITO formed an ohmic contact, while further annealing resulted in a Schottky type contact. The ITO contact with p-type silicon semiconductor is a ro-bust ohmic contact for Si based optoelectronic devices.