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L. I. Murin, V. P. Markevich, I. F. Medvedeva and L. Dobaczewski, “Bistability and Electrical Activity of the Vacancy-Dioxygen Defect in Silicon,” Fizika i Tekhnika Poluprovodnikov, Vol. 40, No. 11, 2006, pp. 1316-1320 (in Russian).

has been cited by the following article:

• TITLE: In-Situ Study of Silicon Single Crystals Conductivity under Electron Irradiation

  AUTHORS: Hrant N. Yeritsyan, Aram A. Sahakyan, Sergey K. Nikoghosyan, Vachagan V. Harutyunyan, Karen Sh. Ohanyan, Norair E. Grigoryan, Eleonora A. Hakhverdyan, Aghasi S. Hovhannisyan, Vahan A. Sahakyan, Kamo A. Movsisyan, Artur V. Hovhannisyan

  KEYWORDS: Silicon; Radiation Defects (RD); Carrier Concentration; Carrier Mobility; Conductivity

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.5, May 23, 2012

  ABSTRACT: The influence of electron radiation on the properties of semiconducting silicon single crystals (Si)—both n- and p-types (currently one of the most widely applied material in the electronic technology) was studied under the electron irradiation process in-situ in air (in common conditions). Higher value of electro-conductivity (σ) during the irradiation process with respect to after irradiation was observed, which was explained by ionization and capture mechanisms resulting in the formation of non-equilibrium carriers (hole-electron pairs). The kinetics of radiation defects generation, their physical nature, temperature stability and relaxation are examined. Structural radiation defects formation: point and complexes, their influence on the silicon conductivity are considered.