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J. S. Kim, I. W. Kim, C. W. Ahn, et al., “Conduction Behavior of SrBi₂Ta₂O₉ Thin Film Grown by Pulsed Laser Deposition,” Japanese Journal of Applied Physics, Vol. 41, 2002, pp. 6785-6789. doi:10.1143/JJAP.41.6785

has been cited by the following article:

• TITLE: Impedance Spectroscopy of Ba5GdTi3V7O30

  AUTHORS: Bana Bihari Mohanty, Priyadarshini Sanghamitra Sahoo, Mohapatra Prakash Kumar Sahoo, Ram Naresh Prasad Choudhary, Ram Naresh Prasad Choudhary, Ram Naresh Prasad Choudhary, Ram Naresh Prasad Choudhary

  KEYWORDS: Ceramics; Dielectric Properties; Electrical Conductivity

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.5, May 23, 2012

  ABSTRACT: The polycrystalline sample of Ba5GdTi3V7O30 , a member of tungsten bronze structural family, was prepared by a high-temperature solid-state reaction technique. A preliminary X-ray diffraction analysis suggests the formation of single-phase compound with orthorhombic structure. The effect of temperature on impedance parameters was studied using an impedance analyzer in a wide frequency range (102- 106 Hz) at different temperatures. The real and imaginary part of complex impedance traces semicircle(s) in the complex plane. The temperature dependent plots reveal the presence of both bulk and grain boundary effects. The bulk resistance of the material decreases with rise in temperature. This exhibits a typical negative temperature coefficient of resistance (NTCR) behavior of the material. The modulus analysis suggests a possible hopping mechanism for electrical transport processes of the material. The nature of variation of dc conductivity suggests Arrhenius type of electrical conductivity.