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W. Zhang and K. Bhattacharya, “A Computational Model of Ferroelectric Domains. Part II: Grain Boundaries and Defect Pinning,” Acta Materialia, Vol. 53, No. 1, 2005, pp. 199-209. doi:10.1016/j.actamat.2004.09.015

has been cited by the following article:

• TITLE: Domain Wall Width in Different Ferroelectrics via Perturbation Route

  AUTHORS: Anik Bandyopadhyay, Arnab Sengupta, Kamal Choudhary, Asis K. Bandyopadhyay, Pratap C. Ray

  KEYWORDS: Ferroelectrics; Domain Width; Impurity Effect; Poling Field

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.2 No.2, May 18, 2012

  ABSTRACT: The domains are of fundamental interest for engineering a ferroelectric material. The domain wall and its width control the ferroelectric behavior to a great extent. The stability of polarization in the context of Landau-Ginzburg free energy functional has been worked out in a previous work by a perturbation approach, where two limits of domain wall width were estimated within the stability zone and they were also found to correspond well with the data on lithium niobate and lithium tantalate. In the present work, it is shown that this model is valid for a wide range of ferroelectric materials and also for a given ferroelectric, such as lithium niobate with different levels of impurities, which are known to affect the domain wall width.