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S. Hong, E. L. Colla, E. Kim, D. V. Taylor, A. K. Tagantsev, P. Muralt, K. No and N. Setter, “High Resolution Study of Domain Nucleation and Growth During Polarization Switching in Pb(Zr,Ti) O₃ Ferroelectric Thin Film Capacitors,” Journal of Applied Physics, Vol. 86, No. 1, 1999, pp. 607-613. doi:10.1063/1.370774

has been cited by the following article:

• TITLE: The Effect of Deposition Temperature of Pb(Zr,Ti)O3(PZT)Thin Films with Thicknesses of around 100 nm on the Piezoelectric Response for Nano Storage Applications

  AUTHORS: Wook Song Han

  KEYWORDS: PZT; AFM; Deposition Temperature; Orientation; Piezoelectric Response

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.2 No.2, May 17, 2012

  ABSTRACT: We investigated the effect of the deposition temperature of PZT thin films with thicknesses of around 100 nm on the piezoelectric response using an atomic force microscope (AFM). The preferred orientation of the PZT thin film was changed from (001) to (110) as the deposition temperature increased. The surface roughness of PZT thin films decreased with the increase of deposition temperature. The maximum amplitude of the piezoelectric response of PZT thin films decreased till the deposition temperature increased to 350°C. This tendency seems to be due to the change of the preferred orientation form (001) to (110). At over 450°C, this maximum value decreased due to both the increase of the surface roughness and the degradation of the crystallinity.