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Y. H. Ra, et al., “The Influence of the Working Pressure on the Synthesis of GaN Nanowires by Using MOCVD,” Journal of Crystal Growth, Vol. 312, No. 6, 2010, pp. 770-774. doi:10.1016/j.jcrysgro.2009.12.056

has been cited by the following article:

• TITLE: Synthesis and Characterization of GaN Rods Prepared by Ammono-Chemical Vapor Deposition

  AUTHORS: Gregorio Guadalupe Carbajal Arízaga, Karina Viridiana Chávez Hernández, Nicolás Cayetano Castro, Manuel Herrera Zaldivar, Rafael García Gutiérrez, Oscar Edel Contreras López

  KEYWORDS: Crystal Morphology; Nanostructures; Chemical Vapor Deposition Processes; Semiconducting III-V Material

  JOURNAL NAME: Advances in Chemical Engineering and Science, Vol.2 No.2, April 27, 2012

  ABSTRACT: GaN rods were deposited by chemical vapor deposition (CVD) onto sapphire (0 0 0 1) and amorphous quartz. The reactive Ga species in vapor the phase was formed with NH4Cl and gallium. The unidirectional growth was catalyzed with gold nanoparticles formed onto the substrate prior to the CVD reaction in order to induce a vapor-liquid-solid (VLS) mechanism. However, this method of synthesis seems to be influenced by other growth mechanisms which formed additional depositions of GaN with different morphology than the rods catalyzed by gold nanoparticles. The moieties of GaN that grew in the absence of gold formed branches in the rods or increased the lateral growth of rods resulting in larger diameters than the size of the gold particle that guided the growth.