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R. S. Kundu, K. L. Bhatia, N. Kishore and P. Singh, “Ef- fect of Addition of Zn Impurities on the Electronic Con- duction in Semiconducting Se80?xTe20Znx Glasses,” Phi- losophical Magazine Part B, Vol. 72, No. 5, 1995, pp. 513-528.

has been cited by the following article:

• TITLE: DC Conductivity and Dielectric Behaviour of Glassy Se100–xZnx Alloy

  AUTHORS: Mohd. Nasir, M. Zulfequar

  KEYWORDS: Glass; DC Conductivity; Activation Energy; Dielectric Constant; Dielectric Loss; DC Conduction Loss

  JOURNAL NAME: Open Journal of Inorganic Non-metallic Materials, Vol.2 No.2, April 25, 2012

  ABSTRACT: The DC conductivity and dielectric properties of glassy Se100–xZnx 2 ≤ x ≤ 20 alloys have been investigated in the temperature range 303 - 487 K with frequency range 100 Hz – 1 MHz. It is observed that DC conductivity decreases and the activation energy increases with Zn content in Se-Zn system. Dielectric dispersion is observed when Zn incorporated in Se-Zn glassy system. The results are explained on the basis of DC conduction mechanism and dipolar-type dielectric dispersion.