TITLE:
Two-Dimensional Materials for Next-Generation Nanoelectronic Devices
AUTHORS:
Arav Rajesh Hinduja, Sananjay Biswas
KEYWORDS:
Two-Dimensional Materials, Nanoelectronics, Transition Metal Dichalcogenides, Field-Effect Transistors, Flexible Electronics
JOURNAL NAME:
World Journal of Nano Science and Engineering,
Vol.16 No.3,
September
24,
2026
ABSTRACT: The ongoing expansion of traditional silicon-based electronics is nearing essential physical and performance constraints, prompting the exploration of alternate materials for next-generation nanoelectronic devices. Two-dimensional (2D) materials, such as graphene, transition metal dichalcogenides (TMDs), and hexagonal boron nitride, have emerged as promising candidates owing to their atomically thin structure, remarkable electrical properties, and superior electrostatic control in ultrathin channels. Semiconducting transition metal dichalcogenides (TMDs) like MoS2 have significant bandgaps and robust carrier confinement, facilitating the development of high-performance field-effect transistors and other nanoscale electronic devices. The atomic thickness of 2D materials enhances gate control and diminishes short-channel effects, rendering them appealing for energy-efficient electronic devices. This review examines the essential characteristics, synthesis techniques, and primary categories of 2D materials, subsequently addressing their applications in nanoelectronic devices, including field-effect transistors and flexible electronics. Ultimately, significant problems such as large-scale production, contact engineering, and device integration are emphasized, alongside prospective research avenues for the implementation of viable 2D-material-based nanoelectronic devices.