TITLE:
Solid State Physics Application in Semiconductor Device Engineering
AUTHORS:
Haoyu Xu
KEYWORDS:
Solid State Physics, Semiconductor Device Engineering, Band Theory, Electron Mobility, Quantum Mechanics
JOURNAL NAME:
Journal of Applied Mathematics and Physics,
Vol.14 No.7,
July
20,
2026
ABSTRACT: This paper is aimed at learning the relationship between solid state physics and optimization of semiconductor device performance along with a study of the application of band theory, carrier transport, and quantum mechanical description in advanced device engineering. The paper is a quantitative study that includes calculations of the theory, statistical analysis of the experimental data, modeling, and it analyzes material-performance correlations across more than 250 semiconductor devices in material systems: Si, GaAs, GaN and wide-bandgap materials. Intrinsic characterizations between crystal structure, electronic band properties and performance metrics are determined by DFT calculations and temperature-dependent characterizations. The relevance of changing speed to electron mobility and negative association between carrier mobility and power consumption (r = 0.78, p −2.3 theory, showing a decrease in mobility from 5000 cm2/Vs at 200 K to 1000 cm2/Vs at 400 K, highlighting thermal control significance. Comparisons show gallium arsenide effective at 5.8 GHz high-frequency switching, while gallium nitride is advantageous for low-power dissipation (25 mW). Results provide physics-based design solutions for applications in artificial intelligence, power electronics and quantum computing systems.