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S. N. Svitasheva, “Some Aspects of Solving the Inverse Eliipsometric Problem for Strongly Absorbing Films,” Avtometriva, No. 4, 1996, p. 119; Optoelectronics Instrumentation Data Process, No. 4, 1996, p. 108.

has been cited by the following article:

• TITLE: Optical Constants for MBE n-Type GaAs Films Doped by Si or Te between 1.50-4.75 eV

  AUTHORS: Svetlana N. Svitasheva

  KEYWORDS: GaAs, Heterostructure, Optical Properties, Thin Films, Spectroscopic Ellipsometry

  JOURNAL NAME: Journal of Electromagnetic Analysis and Applications, Vol.2 No.6, June 30, 2010

  ABSTRACT: The thickness and spectral dependence of the complex refractive index of upper layer in thin-film MBE-grown GaAs heterostructures were calculated basing on an classical oscillatory model of dielectric function from spectra measured by spectroscopic ellipsometry (nondestructive, contactless optical method) in the range of 1.5-4.75 eV.