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Takagi, S., Toriumi, A., Iwase, M. and Tango, H. (1994) On the Universality of Inversion Layer Mobility in Si MOSFETs: Part I-Effects of Substrate Impurity Concentration. IEEE Transactions on Electron Devices, 41, 2357-2362.
https://doi.org/10.1109/16.337449

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