TITLE:
Investigation of Tensoelectric and Dielectric Properties of Bi2Te2-Bi2Sb2 Solid Solution Films under Microwave Field Exposure
AUTHORS:
Nosirjon Khaydarovich Yuldashev, Dilkhumor Tolibjanovna Mamadieva, Rustamjon Uktamovich Siddikov, Khusanboy Mannopovich Sulaymonov
KEYWORDS:
Polycrystalline Film, Bi2Te3-Bi2Sb3, Specific Conductivity, Impedance, Permittivity, Microwave Field, Mechanical Deformation, Heat Treatment
JOURNAL NAME:
Journal of Applied Mathematics and Physics,
Vol.13 No.12,
December
24,
2025
ABSTRACT: The article presents the results of a study of the tensoelectric and dielectric properties of polycrystalline films of the Bi2Te3-Bi2Sb3 solid solution in the microwave frequency range of the electromagnetic field with the aim of determining the mechanisms of influence of point and extended inhomogeneities on the operating parameters of strain gauges for the accumulation of fatigue damage. Some properties of the specific electrical conductivity, impedance, and permittivity of these films are examined as functions of temperature and uniaxial tensile strain. Experimentally observed optical and deformation effects in the studied films under exposure are qualitatively interpreted using the effective medium model. It has been shown that the microwave strain gauge coefficients under static tensile strain depend significantly on the time and temperature of film annealing in atmospheric air. At tann = 1 - 1.5 h and Tann = 500 K, stable film parameters are achieved for Bi2Te3-Bi2Sb3. The observed film properties are due to changes in the microstructure and charge carrier concentration in the (BixSb1−x)2Te3 films after heat treatment. This method of study can serve as a means of measuring charge carrier concentration in inhomogeneous semiconductor structures.