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I. G. Atabaev, T. M. Saliev, E. N. Bakhranov, N. A. Matanov, S. L. Lutpullaev, C. C. Tin, J. Zhang, B. G. Atabaev, N. G. Saidkhanova, F. R. Yuzikaeva, I. Nuritdinov, A. K. Islomov, M. Z. Amanov, E. Rusli and A. Kumta, “Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC,” Materials Science Forum, Vol. 600-603, 2009, pp 457- 460.

has been cited by the following article:

• TITLE: Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

  AUTHORS: Iikham G. Atabaev, Tojiddin M. Saliev, Erkin N. Bakhranov, Dilmurad Saidov, Khimmatali Juraev, Chin C. Tin, Victor Adedeji, Bakhtiyar G. Atabaev, Nilufar G. Saidkhanova

  KEYWORDS: Diffusion, Activation Energy, Silicone Carbide, Annealing, Vacancy

  JOURNAL NAME: Materials Sciences and Applications, Vol.1 No.2, June 30, 2010

  ABSTRACT: Nonequilibrium diffusion of Boron in 3C SiC was performed using a flow of carbon vacancies. The temperature of diffusion was 1150-1250℃ and concentration of Boron in doped area reached about 1019 to 1020 cm-3. It is shown that after thermal annealing in vacuum the characteristics of fabricated structures are close to those of the structures made by the conventional technology.