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C.C.Tin, et al., “Low Temperature Impurity Doping of Silicone Carbide,” US Patent Application Publication,” No: US 2009/0039469 A1, 12 February 2009.

has been cited by the following article:

• TITLE: Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

  AUTHORS: Iikham G. Atabaev, Tojiddin M. Saliev, Erkin N. Bakhranov, Dilmurad Saidov, Khimmatali Juraev, Chin C. Tin, Victor Adedeji, Bakhtiyar G. Atabaev, Nilufar G. Saidkhanova

  KEYWORDS: Diffusion, Activation Energy, Silicone Carbide, Annealing, Vacancy

  JOURNAL NAME: Materials Sciences and Applications, Vol.1 No.2, June 30, 2010

  ABSTRACT: Nonequilibrium diffusion of Boron in 3C SiC was performed using a flow of carbon vacancies. The temperature of diffusion was 1150-1250℃ and concentration of Boron in doped area reached about 1019 to 1020 cm-3. It is shown that after thermal annealing in vacuum the characteristics of fabricated structures are close to those of the structures made by the conventional technology.