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Boiro, M., Diao, A., Ndiaye, A. and Gackou, D. (2024) Influence of Wavelength on the Diffusion Capacitance of a Serial Vertical Junction Silicon Solar Cell in Frequency Regime. American Journal of Materials Science and Engineering, 12, 25-29.
https://doi.org/10.12691/ajmse-12-2-1

has been cited by the following article:

• TITLE: Influence of Crystal Dimensions and P-Layer Thickness on the Optimum Doping Rate for the Best Diffusion Capacity of a Polycrystalline Solar Cell

  AUTHORS: Moussa Camara, Moustapha Thiame, Issa Faye, Sada Traore, Mahamat Batran Mouta, Boubacar Fickou, Landing Diatta

  KEYWORDS: Diffusion Capacity, P-Layer, Three-Dimensional, Optimum Doping, Polycrystalline Solar Cell

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.13 No.9, September 15, 2025

  ABSTRACT: After three-dimensional modeling, we expressed the diffusion capacity of p-layer charges through the transition zone as a function of the impurity concentration in the p-layer, the dimensions of a polycrystalline silicon crystal, and the penetration depth of the p-layer. After analyzing the impact of the parameters cited below on the diffusion capacity, we concluded that the best diffusion capacity is obtained for a dopant range between 1015 and 1017 cm−3. This range is modified by variations in crystal size and p-layer thickness. Thus, increasing crystal size shifts the optimum point towards high doping rates, while increasing p-layer thickness shifts the optimum point towards low p-layer doping rates.