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Thiam, A., Zoungrana, M., Diallo, H.L., Diao, A., Thiam, N., Gueye, S., et al. (2013) Influence of Incident Illumination Angle on Capacitance of a Silicon Solar Cell under Frequency Modulation. Research Journal of Applied Sciences, Engineering and Technology, 5, 1123-1128.
https://doi.org/10.19026/rjaset.5.4825

has been cited by the following article:

• TITLE: Influence of Crystal Dimensions and P-Layer Thickness on the Optimum Doping Rate for the Best Diffusion Capacity of a Polycrystalline Solar Cell

  AUTHORS: Moussa Camara, Moustapha Thiame, Issa Faye, Sada Traore, Mahamat Batran Mouta, Boubacar Fickou, Landing Diatta

  KEYWORDS: Diffusion Capacity, P-Layer, Three-Dimensional, Optimum Doping, Polycrystalline Solar Cell

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.13 No.9, September 15, 2025

  ABSTRACT: After three-dimensional modeling, we expressed the diffusion capacity of p-layer charges through the transition zone as a function of the impurity concentration in the p-layer, the dimensions of a polycrystalline silicon crystal, and the penetration depth of the p-layer. After analyzing the impact of the parameters cited below on the diffusion capacity, we concluded that the best diffusion capacity is obtained for a dopant range between 1015 and 1017 cm−3. This range is modified by variations in crystal size and p-layer thickness. Thus, increasing crystal size shifts the optimum point towards high doping rates, while increasing p-layer thickness shifts the optimum point towards low p-layer doping rates.