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S. Dhar and S. Chakrabarti, “Hall and Photocapacitance Analyses of the Sb-Related Electron Trap in GaAs1–xSbx (x ≤ 0.02) layers Grown by Liquid Phase Epitaxy,” Semiconductor Science and Technology, Vol. 15, No. 6, 2000, pp. 139-140. doi:10.1088/0268-1242/15/6/324

has been cited by the following article:

• TITLE: Study the Effect of Irradiation Time and HF Concentration on Porosity of Porous Silicon and Study Some of the Electrical Properties of Its Based Device

  AUTHORS: Nathera Abass Ali Al-Temeeme, Ghaida Salman Muhammed

  KEYWORDS: Porous Silicon; Photochemical Process; Porosity; Structural Properties; Porosity; Electrical Properties

  JOURNAL NAME: Advances in Materials Physics and Chemistry, Vol.2 No.1, March 19, 2012

  ABSTRACT: Porous silicon has been produced in this work by photochemical etching process (PC).The irradiation has been achieved using ordinary light source (150δ250 W) power and (875 nm) wavelength. The influence of various irradiation times and HF concentration on porosity of PSi material was investigated by depending on gravimetric measurements. The I-V and C-V characteristics for CdS/PSi structure have been investigated in this work too.