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S. Agan, O. A. Mironov, E. H. C. Parker, T. E. Whall, C. P. Parry, V. Y. Kashirin, Y. F. Komnik, V. B. Krasovitsky, B. Verkin and C. J. Emeleus, “Low-Temperature Electron Transport in Si with an MBE-Grown Sb δ Layer”, Physical Review B, Vol. 63, 2001, pp. 5402-5472. doi:10.1103/PhysRevB.63.075402

has been cited by the following article:

• TITLE: Dynamic Deformation Electron-Phonon Interaction in Disordered Bulk Semiconductor

  AUTHORS: Pushpendra Tripathi, Syed Sikandar Zulqarnyn Ashraf, Syed Tahir Hasan, Ami Chand Sharma

  KEYWORDS: Electron-Phonon Scattering Rate; Dynamic Screening; Deformation Potential

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.2 No.1, February 28, 2012

  ABSTRACT: We present our theoretical investigations on the effects of disorder on the electron-phonon interaction in semiconducting GaAs system. Both the temperature (T) and disorder (electron mean free path l) dependences of the electron-phonon scattering rate have been determined. On consideration of the dynamic screening, we find a significant change in the temperature exponent as well as the pre factor from the earlier reported temperature power law dependence result ?T6 obtained under static screening. Also the dynamic screening makes a noticeable change in the character of the dependence of scattering rate on the mean free path from the static screening result.