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Chen, C.H. and Chen, Y.F. (1999) Optical Properties of N-Type Porous Silicon Obtained by Photoelectrochemical Etching. Solid State Communications, 111, 681-685.
https://doi.org/10.1016/s0038-1098(99)00271-9

has been cited by the following article:

• TITLE: Structure of Porous Silicon Formed on n-Type Silicon Wafer

  AUTHORS: Masato Ohmukai

  KEYWORDS: Porous Silicon, n-Type Silicon Wafer, Surface Structure, Scanning Electron Microscope

  JOURNAL NAME: World Journal of Engineering and Technology, Vol.13 No.2, May 23, 2025

  ABSTRACT: Porous silicon is one of attractive light-emitting materials nowadays. The advantage of silicon-related light emitting materials is an environmental-friendly property and low cost of the material. Light-emitting porous silicon has extensively been studied for more than twenty years, mainly being formed on a p-type silicon wafer. The n-type silicon is also of importance because the pn junction, made of the two types of silicon, is a key structure for electronic devices. This article reports the formation of porous silicon formed on n-type silicon wafers and shows the surface and cross-sectional structures observed by a scanning electron microscope. The formation characteristics of porous silicon on n-type silicon wafers are discussed.