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Balucani, M., Bondarenko, V., Franchina, L., Lamedica, G., Yakovtseva, V.A. and Ferrari, A. (1999) A Model of Radiative Recombination in n-Type Porous Silicon-Aluminum Schottky Junction. Applied Physics Letters, 74, 1960-1962.
https://doi.org/10.1063/1.123741

has been cited by the following article:

• TITLE: Structure of Porous Silicon Formed on n-Type Silicon Wafer

  AUTHORS: Masato Ohmukai

  KEYWORDS: Porous Silicon, n-Type Silicon Wafer, Surface Structure, Scanning Electron Microscope

  JOURNAL NAME: World Journal of Engineering and Technology, Vol.13 No.2, May 23, 2025

  ABSTRACT: Porous silicon is one of attractive light-emitting materials nowadays. The advantage of silicon-related light emitting materials is an environmental-friendly property and low cost of the material. Light-emitting porous silicon has extensively been studied for more than twenty years, mainly being formed on a p-type silicon wafer. The n-type silicon is also of importance because the pn junction, made of the two types of silicon, is a key structure for electronic devices. This article reports the formation of porous silicon formed on n-type silicon wafers and shows the surface and cross-sectional structures observed by a scanning electron microscope. The formation characteristics of porous silicon on n-type silicon wafers are discussed.