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Lazarouk, S., Jaguiro, P., Katsouba, S., Masini, G., La Monica, S., Maiello, G., et al. (1996) Stable Electroluminescence from Reverse Biased n-Type Porous Silicon-Aluminum Schottky Junction Device. Applied Physics Letters, 68, 2108-2110.
https://doi.org/10.1063/1.115600

has been cited by the following article:

• TITLE: Structure of Porous Silicon Formed on n-Type Silicon Wafer

  AUTHORS: Masato Ohmukai

  KEYWORDS: Porous Silicon, n-Type Silicon Wafer, Surface Structure, Scanning Electron Microscope

  JOURNAL NAME: World Journal of Engineering and Technology, Vol.13 No.2, May 23, 2025

  ABSTRACT: Porous silicon is one of attractive light-emitting materials nowadays. The advantage of silicon-related light emitting materials is an environmental-friendly property and low cost of the material. Light-emitting porous silicon has extensively been studied for more than twenty years, mainly being formed on a p-type silicon wafer. The n-type silicon is also of importance because the pn junction, made of the two types of silicon, is a key structure for electronic devices. This article reports the formation of porous silicon formed on n-type silicon wafers and shows the surface and cross-sectional structures observed by a scanning electron microscope. The formation characteristics of porous silicon on n-type silicon wafers are discussed.