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L. Kukreja, A. Das and P. Misra, “Studies on Nonvolatile Resistance Memory Switching in ZnO Thin Films,” Bulletin of Materials Science, Vol. 32, No. 3, 2009, pp. 247- 252. doi:10.1007/s12034-009-0037-5

has been cited by the following article:

• TITLE: Growth and Electrical Properties of Doped ZnO by Electrochemical Deposition

  AUTHORS: Dewei Chu, Sean Li

  KEYWORDS: ZnO Electrochemcial Deposition

  JOURNAL NAME: New Journal of Glass and Ceramics, Vol.2 No.1, January 12, 2012

  ABSTRACT: In this work, pure and different metal ions doped ZnO thin films were obtained by a facile electrochemical deposition process. Different morphologies of ZnO, such as nanoplates, nanoparticles, as well as dense film can be obtained by doping Cu2+, In3+, and Al3+, respectively. Besides, the electrical properties of ZnO were also dependent on the doping ions. In this work, only pure ZnO shows resistive switching characteristics, indicating that the defects in ZnO is a key role in inducing resistive switching behaviour.