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J. W. Seo, et al., “A ZnO Cross-Bar Array Resistive Random access Memory Stacked with Heterostructure Diodes for Eliminating the Sneak Current Effect,” Applied Physics Letters, Vol. 98, No. 23, 2011, p. 233505-3. doi:10.1063/1.3599707

has been cited by the following article:

• TITLE: Growth and Electrical Properties of Doped ZnO by Electrochemical Deposition

  AUTHORS: Dewei Chu, Sean Li

  KEYWORDS: ZnO Electrochemcial Deposition

  JOURNAL NAME: New Journal of Glass and Ceramics, Vol.2 No.1, January 12, 2012

  ABSTRACT: In this work, pure and different metal ions doped ZnO thin films were obtained by a facile electrochemical deposition process. Different morphologies of ZnO, such as nanoplates, nanoparticles, as well as dense film can be obtained by doping Cu2+, In3+, and Al3+, respectively. Besides, the electrical properties of ZnO were also dependent on the doping ions. In this work, only pure ZnO shows resistive switching characteristics, indicating that the defects in ZnO is a key role in inducing resistive switching behaviour.