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Young, I.A., Avci, U.E. and Morris, D.H. (2015) Tunneling Field Effect Transistors: Device and Circuit Considerations for Energy Efficient Logic Opportunities. 2015 IEEE International Electron Devices Meeting, Washington, 7-9 December 2015, 1-22.
https://doi.org/10.1109/iedm.2015.7409755

has been cited by the following article:

• TITLE: Examining NiPS3: Properties, Application, and Challenges

  AUTHORS: Jake Huang

  KEYWORDS: NiPS3, 2D Materials, Van der Waals Materials, Bandgap Engineering, Semiconductors, Spintronics, and Materials Science

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.12 No.11, November 27, 2024

  ABSTRACT: The unique structural and electrical properties of two-dimensional van der Waals (vdW) material, nickel-phosphorus trisulfide (NiPS3), render it a promising compound for its adaptation in advanced technology applications. In order to explore its potential practical applications in optoelectronic, spintronic, and energy conversion technologies, this work has explored some of the fundamental aspects defining the excitonic behavior of NiPS3, such as bandgap characteristics, antiferromagnetism, and semiconductor nature derived from its layered structure. This study of the properties of NiPS3 would also outline problems or difficulties that must be faced upon its use in new technologies. This also indicates the demand for further research on NiPS3 to fulfill or realize its promise in technological advancement more fully.