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Strickland, W.M., Baker, L.J., Lee, J., Dindial, K., Elfeky, B.H., Strohbeen, P.J., et al. (2024) Characterizing Losses in InAs Two-Dimensional Electron Gas-Based Gatemon Qubits. Physical Review Research, 6, Article ID: 023094.
https://doi.org/10.1103/physrevresearch.6.023094

has been cited by the following article:

• TITLE: Effective Qubit Emerging from the Nanoheterointerface Two-Dimensional Electron Gas Photodynamics

  AUTHORS: Emmanuel A. Anagnostakis

  KEYWORDS: Semiconductor Nanoheterointerface, Two-Dimensional Electron Gas, Nanosystem Photodynamics, Sign Qubit, Quantum Information Registering

  JOURNAL NAME: Journal of Modern Physics, Vol.15 No.11, September 30, 2024

  ABSTRACT: An “Eigenstate Adjustment Autonomy” Model, permeated by the Nanosystem’s Fermi Level Pinning along with its rigid Conduction Band Discontinuity, compatible with pertinent Experimental Measurements, is being employed for studying how the Functional Eigenstate of the Two-Dimensional Electron Gas (2DEG) dwelling within the Quantum Well of a typical Semiconductor Nanoheterointerface evolves versus (cryptographically) selectable consecutive Cumulative Photon Dose values. Thus, it is ultimately discussed that the experimentally observed (after a Critical Cumulative Photon Dose) Phenomenon of 2DEG Negative Differential Mobility allows for the Nanosystem to exhibit an Effective Qubit Specific Functionality potentially conducive to (Telecommunication) Quantum Information Registering.