TITLE:
Features of Recombination Radiation of GaAs Type Semiconductors with the Participation of Fine Acceptor Levels in a Magnetic Field
AUTHORS:
Nosirjon Khaydarovich Yuldashev, Iftixorjon Isaqovich Yulchiev, Bozorboy Joboraliyevich Akhmadaliev, Khusanboy Manopovich Sulaymonov
KEYWORDS:
Semiconductor, Recombination Radiation, Shallow Acceptor Center, Magnetic Field, Zeeman Splitting, g-Factors, Anisotropy, Circular Polarization, Intensity
JOURNAL NAME:
Journal of Applied Mathematics and Physics,
Vol.12 No.7,
July
17,
2024
ABSTRACT: Using the method of Picus and Beer invariants, general expressions are obtained for the total intensity I and the degree of circular polarization
Р
circ.
of the luminescence of GaAs-type semiconductors with the participation of shallow acceptor levels in a longitudinal magnetic field
H
. Special cases are analyzed depending on the value and direction of the magnetic field strength, as well as on the constants of the g-factor of the acceptor
g
1
,
g
2
and the conduction band electron
g
e
. In the case of a strong magnetic field
H
// [100], [111], [110], a numerical calculation of the angular dependence of the quantities I and
Р
circ.
was performed for some critical values of
g
2
/
g
1
, at which
Р
circ.
exhibits a sharp anisotropy in the range from −100% to +100%, and the intensity of the crystal radiation along the magnetic field tends to a minimum value.