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Yang, W., Wang, W., Liu, Z., et al. (2015) Effect of AlN Buffer Layer Thickness on the Properties of GaN Films Grown by Pulsed Laser Deposition. Materials Science in Semiconductor Processing, 39, 499-505.
https://doi.org/10.1016/j.mssp.2015.05.046

has been cited by the following article:

• TITLE: Annealing Temperature-Dependent Luminescence Color Coordination in Eu-Doped AlN Thin Films

  AUTHORS: Yingda Qian, Mariko Murayama, Sujun Guan, Xinwei Zhao

  KEYWORDS: Low-Temperature PLD Growth, Eu-Doped AlN Thin Film, White Light Emitting Diode

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.12 No.1, January 18, 2024

  ABSTRACT: AlN was used as a host material and doped with Eu grown on Si substrate by pulsed laser deposition (PLD) with low substrate temperature. The X-ray diffraction (XRD) data revealed the orientation and the composition of the thin film. The surface morphology was studied by scanning electron microscope (SEM). While raising the annealing temperatures from 300˚C to 900˚C, the emission was observed from AlN: Eu under excitation of 260 nm excitation. The photoluminescence (PL) was integrated over the visible light wavelength shifted from the blue to the red zone in the CIE 1931 chromaticity coordinates. The luminescence color coordination of AlN: Eu depending on the annealing temperatures guides the further study of Eu-doped nitrides manufacturing on white light emitting diode (LED) and full color LED devices.