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E. A. Anagnostakis, “Quantum Well Character of Semiconductor Homostructures Underlying the Occurrence of a Negative Differential Mobility,” Physica Status Solidi A, Vol. 141, No. 2, 1994, pp. 373-379. doi:10.1002/pssa.2211410216

has been cited by the following article:

• TITLE: On Negative Differential Mobility in Nanophotonic Device Functionality

  AUTHORS: Emmanuel A. Anagnostakis

  KEYWORDS: Nanophotonics, Two-Dimensional Electron-Gas, Semiconductor-Device Nanointerface, Negative Differential Mobility, Optoelectronics Nanotechnology

  JOURNAL NAME: Optics and Photonics Journal, Vol.1 No.4, December 5, 2011

  ABSTRACT: A negative differential mobility (NDM) of the two-dimensional carrier-gas against some proper external regulator allowing for gradual controlled modification of the nanointerfacial environment tends to occur as interwoven with nanophotonic device functionality. In this work, several instances, in our two-decade principal research, of both experimental observation and conceptual prediction concerning nanophotonics NDM are reconsidered towards outlining a global potential for the appearance of the effect.