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H. J. Barnaby, M. Mclain and I. S. Esqueda, “Total-Ion- Izing-Dose Effects on Isolation Oxides in Modern CMOS Technologies,” Nuclear Instruments and Methods in Physics Research B, Vol. 261, No. 1-2, 2007, pp 1142- 1145. doi;10.1016/j.nimb.2007.03.109

has been cited by the following article:

• TITLE: Study of “Radiation Effects of Nuclear High Energy Particles” on Electronic Circuits and Methods to Reduce Its Destructive Effects

  AUTHORS: Omid Zeynali, Daryoush Masti, Maryam Nezafat, Alireza Mallahzadeh

  KEYWORDS: Electronic Circuits, Radiation, Silicon, High Energy Neutrons, Simulated, Thermal

  JOURNAL NAME: Journal of Modern Physics, Vol.2 No.12, December 28, 2011

  ABSTRACT: This research concerns on (TID), (DD) and (SEE) effects also high energy particles’ effects on electronic properties of silicon. It investigates the silicon electronic properties exposed to these particles using a laboratory neutron radiation sources. Some Pieces of a silicon wafer were under neutron radiation at different times and the electrical properties of each one was illustrated by plate resistance measurement and also the strength of the current voltage was simulated by Fluka and MCNP software. Based on these results, authorized limit of silicon tolerance was obtained against high energy neutrons radiation. We put them in the electric furnace under thermal recovery to overcome the unusual behavior of irradiated samples.