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Iwai, H., Ohmi, S., Akama, S., Ohshima, C., Kikuchi, A., Kashiwagi, I., Taguchi, J., Yamamoto, H., Tonotani, J., Kim, Y., Ueda, I., Kuriyama, A. and Yoshihara, Y. (2002) Advanced Gate Dielectric Materials for Sub-100 nm CMOS. Technical Digest-International Electron Devices Meeting, San Francisco, 8-11 December 2002, 625-628.
https://doi.org/10.1109/IEDM.2002.1175917

has been cited by the following article:

• TITLE: Investigation of Sprayed Lu2O3 Thin Films Using XPS

  AUTHORS: Towhid Adnan Chowdhury

  KEYWORDS: Lu2O3, Depth Profiling, X-Ray Photoelectron Spectroscopy, Thin Films

  JOURNAL NAME: Advances in Materials Physics and Chemistry, Vol.13 No.11, November 28, 2023

  ABSTRACT: Spray pyrolysis method was used to deposit Lutetium Oxide (Lu2O3) thin films using lutetium (III) chloride as source material and water as oxidizer. Annealing was carried out in argon atmosphere at 450°C for 60 minutes of the films. To investigate the composition and stoichiometry of sprayed as-deposited and annealed Lu2O3 thin films, depth profile studies using X-ray photoelectron spectroscopy (XPS) was done. Nearly stoichiometric was observed for both annealed and as-deposited films in inner and surface layers.