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C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo and D. Wang, “ZnO Nanowire UV Photodetector with High Internal Gain,” Nano Letters, Vol. 7, No. 4, 2007, pp. 1003-1009. doi:10.1021/nl070111x

has been cited by the following article:

• TITLE: Fabrication and Characteristics of Fast Photo Response ZnO/Porous Silicon UV Photoconductive Detector

  AUTHORS: Hanan A. Thjeel, Abdulla. M. Suhail, Asama N. Naji, Qahtan G. Al-zaidi, Ghaida S. Muhammed, Faten A. Naum

  KEYWORDS: Porous Silicon, P-ZnO/PSi Junction, Nanostructure Materials, Photoconductive Detectors, Recombination and Trapping

  JOURNAL NAME: Advances in Materials Physics and Chemistry, Vol.1 No.3, December 28, 2011

  ABSTRACT: Fast response time UV photoconductive detector was fabricated based on ZnO film prepared by thermal chemical spray pyrolysis technique. The ZnO nanofilms are grown on the porous silicon (PS) nanosurface which has drastically reduced the response time of the ZnO UV detector from few seconds to few hundreds of microseconds. The surface functionalization of the ZnO film deposited on porous silicon (PS) layer by polyamide nylon has highly improved the photoresponsivity of the detector to 0.8 A/W. The normalized de-tectivity (D*) of the fabricated ZnO UV detector at wavelength of 385 nm is found to be about 2.12 × 1011 cm Hz1/2 W–1. The ZnO film grown on the porous silicon layer was oriented in the c-axis and it is found to be a p-type semiconductor, which is referred to the compensation of the excess charge carriers in the ZnO film by the nanospikes silicon layer.