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Besar, A., Shiqin, N., Dominique, T., Pierre, B. (year) Phenomenological Modeling of the Live IV Characteristic of Silicon Carbide SCHOTTKY/JBS Diodes Patrick DENIS. University of Lyon, INSA of Lyon, Laboratory Ampere, CNRS UMR, 21 av. Jean Capelle F69621 Villeurbanne, France, 5005.

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