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N. P. Kobayashi, J. T. Kobayashi, P. D. Dapkus, W. J. Choi, A. E. Bond, X. Zhang and D. H. Rich, “GaN Growth on Si(111) Substrate Using Oxidized AlAs as an Intermediate Layer,” Applied Physics Letters, Vol. 71, No. 24, 1997, pp. 3569-3571. doi:10.1063/1.120394

has been cited by the following article:

• TITLE: Structural and Electrical Characterization of GaN Thin Films on Si(100)

  AUTHORS: Gajanan Niranjan Chaudhari, Vijay Ramkrishna Chinchamalatpure, Sharada Arvind Ghosh

  KEYWORDS: Electron Beam Evaporation Technique, GaN Thin Film, C-V, I-V

  JOURNAL NAME: American Journal of Analytical Chemistry, Vol.2 No.8, December 7, 2011

  ABSTRACT: The Gallium Nitride (GaN) layers grown on silicon substrates by electron beam evaporation technique. X- ray diffraction revealed that polycrystalline GaN was obtained indicating the enhance crystallinity of the films with annealing temperature at 600oC. Crystalline quality of the GaN films was determined by Scanning Electron Microscopy (SEM). The crystalline size increases with increasing annealing temperature. The fab- ricated MIS structures were characterized using Capacitance-Voltage (C-V) measurements, the capacitance remains nearly constant over a large range in higher negative as well as over a large range in higher positive gate voltages and Current-Voltage (I-V) measurements shows low forward and reverse current possibly due to high density defect formation in the thin layer of gallium nitride during its growth.The film is characterized by X-Ray photoelectron spectroscopy (XPS). The XPS spectra show that formation of pure GaN with- out presence of elemental gallium and Ga2O3 in this film.