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Passlak, M., Schubert, E.F., Hobson, W.S., Hong, M., Moriya, N., Chu, S.N.G., Koutadinidis, K., Maunaerts, J.P., Schnoes, M.L. and Zydzik, G.J. (1995) Ga2O3 Films for Electronic and Optoelectronic Applications. Journal of Applied Physics, 77, 686- 693.
https://doi.org/10.1063/1.359055

has been cited by the following article:

• TITLE: XPS Depth Profile Study of Sprayed Ga2O3 Thin Films

  AUTHORS: Towhid Adnan Chowdhury

  KEYWORDS: Ga2O3, Thin Films, x-Ray Photoelectron Spectroscopy, Depth Profiling

  JOURNAL NAME: Engineering, Vol.15 No.8, August 4, 2023

  ABSTRACT: Ga2O3 thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. The films were annealed at 450°C for 60 minutes in argon atmosphere. X-ray photoelectron spectroscopy (XPS) depth profile studies were carried out to analyze the stoichiometry and composition of sprayed as-deposited and annealed Ga2O3 thin films. Surface layers and the inner layers of as-deposited and annealed films were found nearly stoichiometric.