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Matsuzaki, M., Hiramatsu, H., Nomura, K., Yanagi, H., Kamiya, T., Hirano, M. and Hosono, H. (2006) Growth, Structure and Carrier Transport Properties of Ga2O3 Epitaxial Film Examined for Transparent Field-Effect Transistor. Thin Solid Films, 496, 37-41.
https://doi.org/10.1016/j.tsf.2005.08.187

has been cited by the following article:

• TITLE: XPS Depth Profile Study of Sprayed Ga2O3 Thin Films

  AUTHORS: Towhid Adnan Chowdhury

  KEYWORDS: Ga2O3, Thin Films, x-Ray Photoelectron Spectroscopy, Depth Profiling

  JOURNAL NAME: Engineering, Vol.15 No.8, August 4, 2023

  ABSTRACT: Ga2O3 thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. The films were annealed at 450°C for 60 minutes in argon atmosphere. X-ray photoelectron spectroscopy (XPS) depth profile studies were carried out to analyze the stoichiometry and composition of sprayed as-deposited and annealed Ga2O3 thin films. Surface layers and the inner layers of as-deposited and annealed films were found nearly stoichiometric.