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S. Pandija, D. Roy and S. V. Babu, “Achievement of High Planarization Efficiency in CMP of Copper at a Reduced down Pressure,” Microelectronic Engineering, Vol. 86, No. 3, 2009, pp. 367-373. doi:10.1016/j.mee.2008.11.047

has been cited by the following article:

• TITLE: Improvement of High Dynamic Range Capacitive Displacement Sensor by a Globalm Planarization

  AUTHORS: Daesil Kang, Wonkyu Moon

  KEYWORDS: High Dynamic Range, Capacitive Displacement Sensor, Planarization, Contact Method

  JOURNAL NAME: Journal of Sensor Technology, Vol.1 No.4, December 5, 2011

  ABSTRACT: This study presents an improvement of high dynamic range contact-type capacitive displacement sensor by applying planarization. The sensor is called the contact-type linear encoder-like capacitive displacement sensor (CLECDiS), is a nano-meter-resolution sensor with a wide dynamic range. However, height differences due to patterned electrodes may cause a variety of problems or performance degradation. In devices of two glass wafer surfaces with patterned structures assembled face-to-face and in sliding contact, the heights of the patterns crucially affect their performance and practicality, so it should be planarized for reducing the problem. A number of techniques for planarizing glass wafer surfaces with patterned chrome electrodes were evaluated and the following three were selected as adequate: lift-off, etch-back, and chemical mechanical polishing (CMP). The fabricated samples showed that CMP provided the best planarization. CMP was successfully employed to produce CLECDiS with improved signal reliability due to reduced collisions between electrodes.